Laboratoire Charles Coulomb UMR 5221 CNRS/UM2 (L2C)

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- Hexagonal Boron Nitride Single Crystal Growth from Solution with a Temperature Gradient doi link

Auteur(s): Li Jiahan, Chao Yuan, Elias C., Wang Junyong, Zhang Xiaotiang, Ye Gaihua, Chaoran Huang, Kuball Martin, Eda Goki, Redwing Joan m;, He Rui, Cassabois G., Gil B.(Corresp.), Valvin P., Pelini T., Liu Bin, Edgar James h

(Article) Publié: Chemistry Of Materials, vol. p.xxx (2020)


Ref HAL: hal-02615364_v1
DOI: 10.1021/acs.chemmater.0c00830
Exporter : BibTex | endNote
Résumé:

Hexagonal boron nitride (hBN) is attracting much attention due to its tremendous applications including nanophotonic and electronic devices, substrates for two-dimensional (2D) materials, heat management materials, etc. To achieve the best device performance, large area hBN single crystals are required. Herein, large area (>500 microns each) high-quality (defect density < 0.52/μm2) bulk hBN single crystals are grown from molten metal solutions with a temperature gradient. The narrow Raman linewidths of the intralayer E2g mode peak and the interlayer shear mode, the strong and sharp phonon-assisted transition photoluminescence peaks, and the high thermal conductivity demonstrate that the hBN produced by this method are high crystal quality with a low density of defects. Atomic force microscope images show that atomically flat layers of hBN can be produced by exfoliation. This study not only demonstrates a new strategy for growing large hBN single crystals, but also provides high quality thick and thin hBN layers for nano device applications




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