Tunable plasma wave resonant detection of optical beating in high electron mobility transistor Auteur(s): Torres Jérémi, Nouvel P., Akwoue-Ondo A., Chusseau L., Teppe F., Shchepetov A., Bollaert S. (Article) Publié: Applied Physics Letters, vol. 89 p.201101.1-201101.3 (2006) Texte intégral en Openaccess : Ref HAL: hal-00105454_v1 Ref Arxiv: physics/0610078 Ref. & Cit.: NASA ADS Exporter : BibTex | endNote Résumé: We report on tunable terahertz resonant detection of two 1.55 µm cw-lasers beating by plasma waves in AlGaAs/InGaAs/InP high-electron-mobility transistor. We show that the fundamental plasma resonant frequency and its odd harmonics can be tuned with the applied gate-voltage in the range 75–490 GHz. The observed frequency dependence on gate-bias is found to be in good agreement with the theoretical plasma waves dispersion law. |