Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power Auteur(s): Tauk R., Teppe F., Boubanga tombet Stephane, Coquillat D., Knap W., Meziani Y. M., Gallon C., Boeuf F., Skotnicki T., Fenouillet-Beranger C., Maude D. K., Rumyantsev S., Shur M. S. (Article) Publié: Applied Physics Letters, vol. 89 p.253511 (2006) Ref HAL: hal-00541599_v1 DOI: 10.1063/1.2410215 WoS: 000243415200116 Exporter : BibTex | endNote 294 Citations Résumé: Si metal oxide semiconductor field effect transistors (MOSFETs) with the gate lengths of 120-300 nm have been studied as room temperature plasma wave detectors of 0.7 THz electromagnetic radiation. In agreement with the plasma wave detection theory, the response was found to depend on the gate length and the gate bias. The obtained values of responsivity (<= 200 V/W) and noise equivalent power (>= 10(-10) W/Hz(0.5)) demonstrate the potential of Si MOSFETs as sensitive detectors of terahertz radiation. (c) 2006 American Institute of Physics. |