Influence of High Magnetic Field and Gate Length on Terahertz Detection by Field Effect Transistors Auteur(s): Knap W., Videlier H., Boubanga tombet Stephane, Teppe F., Coquillat D., Diakonova N., Lusakowski J., Karpierz K.
Conférence invité: SET159 Specialists Meeting on Terahertz and Other Electromagnetic Wave Techniques for Defence and Se (Vilnius, LT, 2010-05-03) Ref HAL: hal-00812125_v1 Exporter : BibTex | endNote Résumé: Influence of High Magnetic Field and Gate Length on Terahertz Detection by Field Effect Transistors |