• Physique/Matière Condensée/Science des matériaux
  
• Physique/Matière Condensée/Autre
  
• Physique/Physique Quantique
  
• Physique/Physique/Optique
  
• Physique/Physique/Biophysique
  
• Physique
  
• Sciences de l'ingénieur
  
• Sciences de l'ingénieur/Matériaux
  
• Sciences de l'ingénieur/Génie des procédés
  
• Physique/Matière Condensée/Systèmes mésoscopiques et effet Hall quantique
  

Antiferromagnetic materials are promising platforms for next-generation spintronics owing to their fast dynamics and high robustness against parasitic magnetic fields. However, nanoscale imaging of the magnetic order in such materials with zero net magnetization remains a major experimental challenge. Here we show that non-collinear antiferromagnetic spin textures can be imaged by probing the magnetic noise they locally produce via thermal populations of magnons. To this end, we perform nanoscale, all-optical relaxometry with a scanning quantum sensor based on a single nitrogen-vacancy (NV) defect in diamond. Magnetic noise is detected through an increase of the spin relaxation rate of the NV defect, which results in an overall reduction of its photoluminescence signal under continuous laser illumination. As a proof-of-concept, the efficiency of the method is demonstrated by imaging various spin textures in synthetic antiferromagnets, including domain walls, spin spirals and antiferromagnetic skyrmions. This imaging procedure could be extended to a large class of intrinsic antiferromagnets and opens up new opportunities for studying the physics of localized spin wave modes for magnonics.

We report the detection of individual emitters in silicon belonging to seven different families of optically active point defects. These fluorescent centers are created by carbon implantation of a commercial silicon- on-insulator wafer usually employed for integrated photonics. Single photon emission is demonstrated over the 1.1–1.55 μm range, spanning the O and C telecom bands. We analyze their photoluminescence spectra, dipolar emissions, and optical relaxation dynamics at 10 K. For a specific family, we show a constant emission intensity at saturation from 10 K to temperatures well above the 77 K liquid nitrogen temperature. Given the advanced control over nanofabrication and integration in silicon, these individual artificial atoms are promising systems to investigate for Si-based quantum technologies.

Given its potential for integration and scalability, silicon is likely to be a key platform for large-scale quantum technologies. Individual electron-encoded artificial atoms, formed by either impurities or quantum dots, have emerged as a promising solution for silicon-based integrated quantum circuits. However, single qubits featuring an optical interface, which is needed for long-distance exchange of information, have not yet been isolated in silicon. Here we report the isolation of single optically active point defects in a commercial silicon-on-insulator wafer implanted with carbon atoms. These artificial atoms exhibit a bright, linearly polarized single-photon emission with a quantum efficiency of the order of unity. This single-photon emission occurs at telecom wavelengths suitable for long-distance propagation in optical fibres. Our results show that silicon can accommodate single isolated optical point defects like in wide-bandgap semiconductors, despite a small bandgap (1.1 eV) that is unfavourable for such observations.

Chirality, a foundational concept throughout science, may arise at ferromagnetic domain walls1 and in related objects such as skyrmions2. However, chiral textures should also exist in other types of ferroic materials, such as antiferromagnets, for which theory predicts that they should move faster for lower power3, and ferroelectrics, where they should be extremely small and possess unusual topologies4,5. Here, we report the concomitant observation of antiferromagnetic and electric chiral textures at domain walls in the room-temperature ferroelectric antiferromagnet BiFeO3. Combining reciprocal and real-space characterization techniques, we reveal the presence of periodic chiral antiferromagnetic objects along the domain walls as well as a priori energetically unfavourable chiral ferroelectric domain walls. We discuss the mechanisms underlying their formation and their relevance for electrically controlled topological oxide electronics and spintronics.