• Physique/Matière Condensée/Science des matériaux
  
• Physique/Matière Condensée
  
• Physique/Physique Quantique
  
• Physique/Physique/Physique Générale
  
• Physique
  
• Sciences de l'Homme et Société
  
• Sciences de l'ingénieur
  
• Physique/Matière Condensée/Autre
  
• Physique/Physique/Optique
  
• Physique/Physique/Biophysique
  
• Sciences de l'ingénieur/Matériaux
  
• Sciences de l'ingénieur/Génie des procédés
  
• Physique/Matière Condensée/Systèmes mésoscopiques et effet Hall quantique
  

In this work we investigate the properties of negatively charged nitrogen-vacancy (NV−) centres created during single crystal diamond growth by chemical vapour deposition (CVD) on [113]-oriented substrates and with N2O as a dopant gas. The use of spin echo and double electron-electron resonance (DEER) allows us to assess NV− ratio with respect to substitutional nitrogen impurities (N_S0) incorporated during growth, a critical figure of merit for quantum technologies. We demonstrate that, at moderate growth temperatures (800 °C), dense NV− ensembles of several hundreds of ppb (800 ppb for 50 ppm of added N2O) and with exceptionally high NV−/N_S0 ratios of up to 25% can be achieved. This NV− creation yield is higher by at least an order of magnitude to that typically obtained on standard [100]-grown diamonds and comparable to the best values reported for electron-irradiated diamonds. The material obtained here thus advantageously combines a high NV− density, high creation yield, long coherence times of several tens of μs together with a partial preferential orientation. These are highly desirable requirements for diamond-based quantum sensors that may spur new developments with this crystalline orientation leading to improved performance and sensitivity.

BiFeO3 is a rich room-temperature multiferroic material in which noncollinear antiferromagnetic spin cycloids can be deterministically controlled by an electric field through the magnetoelectric interaction, opening perspectives for low-power reconfigurable antiferromagnetic spintronics. Using a commercial scanning nitrogen-vacancy (N-V) magnetometer, we are able to image two different types of spin cycloids stabilized in strain-engineered BiFeO3 epitaxial thin films. We show that, in these samples harboring two ferroelectric variants, each ferroelectric domain is coupled to a single spin cycloid, giving rise to a zigzag magnetic pattern. These ferroelectric domains can be manipulated at the local scale by piezoresponse force microscopy, allowing the design of micron-sized single domains. Thanks to its coupled optical microscope and fast-imaging capabilities, the scanning N-V magnetometer enables a quick repositioning in such areas of interest. Finally, quantitative imaging on single ferroelectric domains provides insights into the physical parameters of each spin-cycloid type and their impact on the magnetic-stray-field measurements.

We investigate the magnetic field dependent photo-physics of individual Nitrogen-Vacancy (NV) color centers in diamond under cryogenic conditions. At distinct magnetic fields, we observe significant reductions in the NV photoluminescence rate, which indicate a marked decrease in the optical readout efficiency of the NV's ground state spin. We assign these dips to excited state level anti-crossings, which occur at magnetic fields that strongly depend on the effective, local strain environment of the NV center. Our results offer new insights into the structure of the NVs' excited states and a new tool for their effective characterization. Using this tool, we observe strong indications for strain-dependent variations of the NV's orbital g-factor, obtain new insights into NV charge state dynamics, and draw important conclusions regarding the applicability of NV centers for low-temperature quantum sensing.

Controlling the quantum properties of individual fluorescent defects in silicon is a key challenge toward large-scale advanced quantum photonic devices. Research efforts have so far focused on extrinsic defects based on impurities incorporated inside the silicon lattice. Here, we demonstrate the detection of single intrinsic defects in silicon, which are linked to a tri-interstitial complex called the W-center, with a zero-phonon line at 1.218 μm. Investigating their single-photon emission properties reveals new information about this common radiation damage center, such as its dipolar orientation and its photophysics. We also identify its microscopic structure and show that, although this defect does not feature electronic states in the bandgap, Coulomb interactions lead to excitonic radiative recombination below the silicon bandgap. These results could set the stage for numerous quantum perspectives based on intrinsic luminescent defects in silicon, such as integrated quantum photonics and quantum communications.

We report the fabrication of G centers in silicon with an areal density compatible with single photon emission at optical telecommunication wavelengths. Our sample is made from a silicon-on-insulator wafer which is locally implanted with carbon ions and protons at various fluences. Decreasing the implantation fluences enables to gradually switch from large ensembles to isolated single defects, reaching areal densities of G centers down to $\sim$0.2 $\mu$m$^{-2}$. Single defect creation is demonstrated by photon antibunching in intensity-correlation experiments, thus establishing our approach as a reproducible procedure for generating single artificial atoms in silicon for quantum technologies.