• Physique/Matière Condensée/Autre
  
• Physique/Physique Quantique
  
• Physique/Matière Condensée/Science des matériaux
  
• Physique
  
• Physique/Physique/Optique
  
• Sciences de l'ingénieur/Microélectronique
  
• Sciences de l'ingénieur/ photonique
  
• Physique/Matière Condensée/Systèmes mésoscopiques et effet Hall quantique
  

We demonstrate room-temperature stabilization of dipolar magnetic skyrmions with diameters in the range of 100 nm in a single ultrathin layer of the Heusler alloy Co2FeAl (CFA) under moderate magnetic fields. Current-induced skyrmion dynamics in microwires is studied with a scanning nitrogen-vacancy magnetometer operating in the photoluminescence quenching mode. We first demonstrate skyrmion nucleation by spin-orbit torque and show that its efficiency can be significantly improved using tilted magnetic fields, an effect that is not specific to Heusler alloys and could be advantageous for future skyrmion-based devices. We then show that current-induced skyrmion motion remains limited by strong pinning effects, even though CFA is a magnetic material with a low magnetic damping parameter.

Quantum sensing with diamond

Nitrogen-vacancy magnetic microscopy is employed in quenching mode as a non-invasive, high resolution tool to investigate the morphology of isolated skyrmions in ultrathin magnetic films. The skyrmion size and shape are found to be strongly affected by local pinning effects and magnetic field history. Micromagnetic simulations including a static disorder, based on the physical model of grain-to-grain thickness variations, reproduce all experimental observations and reveal the key role of disorder and magnetic history in the stabilization of skyrmions in ultrathin magnetic films. This work opens the way to an in-depth understanding of skyrmion dynamics in real, disordered media.

We analyze the properties of a pulsed coherent population trapping protocol that uses a controlled decay from the excited state in a Λ-level scheme. We study this problem analytically and numerically and find regimes where narrow transmission, absorption, or fluorescence spectral lines occur. We then look for optimal frequency measurements using these spectral features by computing the Allan deviation in the presence of ground state decoherence and show that the protocol is on a par with Ramsey-CPT. We discuss possible implementations with ensembles of alkali atoms and single ions and demonstrate that typical pulsed-CPT experiments that are realized on femto-second timescales can be implemented on micro-seconds timescales using this scheme.

We addressed the carrier dynamics in so-called G-centers in silicon (consisting of substitutional-interstitial carbon pairs interacting with interstitial silicons) obtained via ion implantation into a silicon-on-insulator wafer. For this point defect in silicon emitting in the telecommunication wavelength range, we unravel the recombination dynamics by time-resolved photoluminescence spectroscopy. More specifically, we performed detailed photoluminescence experiments as a function of excitation energy, incident power, irradiation fluence and temperature in order to study the impact of radiative and non-radiative recombination channels on the spectrum, yield and lifetime of G-centers. The sharp line emitting at 969 meV ($\sim$1280 nm) and the broad asymmetric sideband developing at lower energy share the same recombination dynamics as shown by time-resolved experiments performed selectively on each spectral component. This feature accounts for the common origin of the two emission bands which are unambiguously attributed to the zero-phonon line and to the corresponding phonon sideband. In the framework of the Huang-Rhys theory with non-perturbative calculations, we reach an estimation of 1.6$\pm$0.1 $\angstrom$ for the spatial extension of the electronic wave function in the G-center. The radiative recombination time measured at low temperature lies in the 6 ns-range. The estimation of both radiative and non-radiative recombination rates as a function of temperature further demonstrate a constant radiative lifetime. Finally, although G-centers are shallow levels in silicon, we find a value of the Debye-Waller factor comparable to deep levels in wide-bandgap materials. Our results point out the potential of G-centers as a solid-state light source to be integrated into opto-electronic devices within a common silicon platform.