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(64) Production(s) de PEYRE H.
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Influence of AlN thickness on AlGaN epilayer grown by MOCVD  Auteur(s): Jayasakthi M., Juillaguet S., Peyre H., Konczewicz L., Baskar K., Contreras S. (Article) Publié: Superlattices And Microstructures, vol. 98 p.515-521 (2016) |
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Ge Addition during 4H-SiC Epitaxial Growth by CVD: Mechanism of Incorporation Auteur(s): Soulière Véronique, Alassaad Kassem, Cauwet François, Peyre H., Kups Thomas, Pezoldt Jörg, Kwasnicki P., Ferro Gabriel
Conference: 10th European Conference on Silicon Carbide and Related Materials (Grenoble, FR, 2014-09) |
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Influence of Site Competition Effects on Dopant Incorporation during Chemical Vapor Deposition of 4H-SiC Epitaxial Layers Auteur(s): Arvinte Roxana, Zielinski Marcin, Chassagne Thierry, Portail Marc, Michon Adrien, Kwasnicki P., Juillaguet S., Peyre H.
Conference: 10th European Conference on Silicon Carbide and Related Materials (Grenoble, FR, 2014-09) |
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Nitrogen Incorporation during Seeded Sublimation Growth of 4H-SiC and 6H-SiC Auteur(s): Tsavdaris Nikolaos, Kwasnicki P., Ariyawong Kanaparin, Valle Nathalie, Peyre H., Sarigiannidou Eirini, Juillaguet S., Chaussende Didier
Conference: ECSCRM (Grenoble, FR, 2014-09-21) |
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Comparative Study of n-Type 4H-SiC: Raman vs Photoluminescence Spectroscopy Auteur(s): Kwasnicki P., Arvinte Roxana, Peyre H., Zielinski Marcin, Juillaguet S.
Conference: 10th European Conference on Silicon Carbide and Related Materials (Grenoble, FR, 2014-09) |
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Optical characterization of p-type 4H-SiC epilayers Auteur(s): Liaugaudas Gediminas, Dargis Donatas, Kwasnicki P., Peyre H., Arvinte Roxana, Juillaguet S., Zielinski Marcin, Jarašiunas Kestutis
Conference: ECSCRM (Miyasaki, JP, 2014-10-29) |
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Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly P-Typed Doped 4H-SiC Layer Selectively Grown by VLS Transport Auteur(s): Thierry-Jebali Nicolas, Vo-Ha Arthur, Carole Davy, Lazar Mihai, Ferro Gabriel, Peyre H., Contreras S., Brosselard Pierre
Conference: HeteroSiC-WASMPE (Nice, FR, 2013-06-17) |
