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(64) Production(s) de PEYRE H.
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Nitrogen doping of 3C-SiC thin films grown by CVD in a resistively heated horizontal hot-wall reactor  Auteur(s): Zielinski M., Portail M., Chassagne T., Juillaguet S., Peyre H.
(Article) Publié:
Journal Of Crystal Growth, vol. 310 p.3174-3182 (2008)
Texte intégral en Openaccess : |
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Growth and characterization of C-13 enriched 4H-SiC for fundamental materials studies Auteur(s): Jang Yeon-Suk, Sakwe Sakwe A., Wellmann Peter J., Juillaguet S., Peyre H., Camassel J., Steeds John W.
Conference: 6th European Conference on Silicon Carbide and Related Materials (Newcastle upon Tyne (ENGLAND), FR, 2006-09) |
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SIMS Investigation of Ge and N Incorporation in 3C-SiC Layers Grown by VLS from Ge-Si Melts Auteur(s): Peyre H., Habka Nada, Soulière Véronique, Soueidan Maher, Ferro Gabriel, Monteil Yves, Camassel J.
Conference: Hetero-SiC'07 (Grenoble, FR, 2007-06-28) |
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SIMS Investigation of Ge Incorporation in 3C-SiC Layers Grown from Ge-Si Melts Auteur(s): Peyre H., Habka Nada, Soulière Véronique, Soueidan Maher, Ferro Gabriel, Monteil Yves, Camassel J.
Conference: 6th European Conference on Silicon Carbide and Related Materials (Newcastle upon Tyne, GB, 2006-09) |
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Control of 3C-SiC/Si wafer bending by the "checker-board" carbonization method Auteur(s): Chassagne Thierry, Ferro Gabriel, Haas H., Mank H., Leycuras André, Monteil Yves, Soares Fillip, Balloud Carole, Arcade P., Blanc C., Peyre H., Juillaguet S., Camassel J.
Conference: International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC 2004) (MONTPELLIER, FR, 2004-06-01) |
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Investigation of 2 inch SiC layers grown in a resistively-heated LP-CVD reactor with horizontal “hot-walls” Auteur(s): Chassagne Thierry, Leycuras André, Balloud Carole, Arcade P., Peyre H., Juillaguet S.
Conference: 10th International Conference on Silicon Carbide and Related Materials (ICSCRM2003) (Lyon, FR, 2003-10-05) |
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Visible light laser irradiation: A tool for implantation damage reduction Auteur(s): Camassel J., Peyre H., Brink D. J., Zielinski Marcin, Blanqué Servane, Mestres N., Godignon Philippe
Conference: 10th International Conference on Silicon Carbide and Related Materials (ICSCRM2003) (Lyon, FR, 2003-10-05) |
