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(64) Production(s) de PEYRE H.
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Synthesis and characterization of aluminum doped zinc oxide nanoparticles via a novel and low cost aqueous chemical process  Auteur(s): Moussa Tankari A., Medjnoun K., Nouiri M., Briot O., Juillaguet S., Peyre H., Belaqziz M., Djessas K.
(Article) Publié:
Materials Letters, vol. 353 p.135230 (2023)
Texte intégral en Openaccess : |
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High temperature electrical transport properties of MBE-grown Mg-doped GaN and AlGaN materials Auteur(s): Konczewicz L., Juillaguet S., Litwin-Staszewska E., Piotrzkowski R., Peyre H., Matta S., Al Khalfioui M., Leroux M., Damilano B., Brault J., Contreras S.
(Article) Publié:
Journal Of Applied Physics, vol. 128 p.085703 (2020)
Texte intégral en Openaccess : |
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4H-SIC p-type doping determination from secondary electrons imaging Auteur(s): Kayambaki M, Makris N., Tsagarakis K., Peyre H., Stavrinidis A, Zekentes K.
Conference: 12th European Conference on Silicon Carbide and Related Materials (ECSCRM) (Birmingham, GB, 2018-09-02) |
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(Al,Ga)N quantum dots for deep UV LEDs Auteur(s): Brault Julien, Matta S., Al khalfioui Mohamed, Korytov M, Ngo T. H., Vuong P., Leroux Mathieu, Damilano Benjamin, Chenot S., Vennegues P, Duboz J. y., Massies Jean, Chaix C., Peyre H., Juillaguet S., Contreras S., Gil B.
Conference: International Workshop on Nitride Semiconductor (Kanazawa, JP, 2018-11-11) |
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Effect of Temperature on Electrical Transport Properties of MBE grown Mg-doped GaN and AlGaN Auteur(s): Contreras S., Konczewicz L., Juillaguet S., Peyre H., Al Khalfioui Mohamed, Matta S., Leroux Mathieu, Damilano Benjamin, Gil B., Brault Julien (Affiches/Poster) International Workshop on Nitride Semiconductor (Kanazawa, JP), 2018-11-11 |
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Photoluminescence study of Mg-doped GaN and AlxGa1-xN (x<0.4) grown by molecular epitaxy
Auteur(s): Brault Julien, Leroux Mathieu, Matta S., Al Khalfioui Mohamed, Damilano Benjamin, Peyre H., Contreras S., Juillaguet S., Gil B. (Affiches/Poster) International Workshop on Nitride Semiconductor (Kanazawa, JP), 2018-11-11 |
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Optimization of the properties of the molybdenum back contact deposited by radiofrequency sputtering for Cu( In 1 − x Ga x ) Se 2 solar cells Auteur(s): Briot O., Moret M., Barbier Camille, Tiberj A., Peyre H., Sagna A., Contreras S. (Article) Publié: Solar Energy Materials And Solar Cells, vol. 174 p.418 - 422 (2018) |
