Photoluminescence up-conversion in single self-assembled InAs/GaAs quantum dots Auteur(s): Kammerer C., Cassabois G., Voisin C., Delalande C., Roussignol P., Gerard Jm (Article) Publié: Physical Review Letters, vol. 87 p.207401 (2001) Ref HAL: hal-00546746_v1 PMID 11690509 DOI: 10.1103/PhysRevLett.87.207401 WoS: 000172182900048 Exporter : BibTex | endNote 94 Citations Résumé: Microphotoluminescence measurements under ew excitation reveal the existence of a strong photoluminescence up-conversion from single InAs/GaAs self-assembled quantum dots and also from the InAs wetting layer. Excitation spectroscopy of the up-converted photoluminescence signal shows identical features from the wetting layer and the single quantum dots, i.e., a band tail coming from the deep states localized at the rough interfaces of the wetting layer quantum well. This observation of photoluminescence up-conversion demonstrates the influence on the quantum dot properties of the environment, and highlights the limitations of the artificial atom model for a semiconductor quantum dot. |