Auteur(s): Camassel J., Pernot Julien, Wang H. Y., Peyre H.
Conference: EXMATEC'02 International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies No6 (Budapest, HU, 2002-05-26)
Actes de conférence: Physica status solidi. A. Applied research, vol. 195 p.38-43 (2003)
Texte intégral en Openaccess : 
Ref HAL: hal-00389902_v1
DOI: 10.1002/pssa.200306265
WoS: 000180796700005
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15 Citations
Résumé:
Infrared reflectance is a powerful tool to control, rapidly and non-destructively, complex active layer stacks for electronic devices applications. The case of interest which is considered in this work concerns 4H-SiC Schottky diode structures. They are made of a lightly doped layer (drift zone, 5 x 1015 cm-3) on top of a heavily doped n+ substrate (5 x 1018 cm-3). In between is a thin (buried) SiC layer used as field stop (or buffer). From model calculations performed in the range 1000-4000 cm-1, we show that the shape of the interference spectra is very sensitive to the doping and thickness of the buried (buffer) layer.