Strain relief analysis of InN quantum dots grown on GaN Auteur(s): Lozano Juan G., Sanchez Ana M., Garcia Rafael, Ruffenach S., Briot O., Gonzalez David (Article) Publié: Nanoscale Research Letters, vol. 2 p.442-446 (2007) Texte intégral en Openaccess : Ref HAL: hal-00390128_v1 PMID 21794190 DOI: 10.1007/s11671-007-9080-6 WoS: 000253655600003 Exporter : BibTex | endNote 15 Citations Résumé: We present a study by transmission electron microscopy (TEM) of the strain state of individual InN quantum dots (QDs) grown on GaN substrates. Moire fringe and high resolution TEM analyses showed that the QDs are almost fully relaxed due to the generation of a 60 degrees misfit dislocation network at the InN/GaN interface. By applying the Geometric Phase Algorithm to plan-view high-resolution micrographs, we show that this network consists of three essentially non-interacting sets of misfit dislocations lying along the angle(1) over bar2 (1) over bar0 > directions. Close to the edge of the QD, the dislocations curve to meet the surface and form a network of threading dislocations surrounding the system. |