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- Structural and photoluminescence properties of ZnO thin films prepared by sol-gel process doi link

Auteur(s): Petersen J., Brimont C., Gallart M., Cregut O., Schmerber G., Gilliot P., Honerlage B., Ulhaq-Bouillet C., Rehspringer J. L., Leuvrey C., Colis S., Aubriet H., Becker C., Ruch D., Slaoui A., Dinia A.

(Article) Publié: Journal Of Applied Physics, vol. 104 p.113539 (2008)


Ref HAL: hal-00545174_v1
DOI: 10.1063/1.3021358
WoS: 000262364000065
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Résumé:

The present study focuses on the structural and optical properties of ZnO thin films fabricated by sol-gel process and spin coated onto Si (100) and quartz substrates. The ZnO films have a hexagonal wurtzite structure with a grain size of about 50 nm. The x-ray photoelectron spectroscopy measurements reveal the presence of Zn2+ and of zinc hydroxyl groups at the film. Optical properties were studied by photoluminescence (PL) and absorption spectroscopy at low and room temperatures. The absorption spectrum is dominated by a sharp excitonic peak at room and low temperatures. At room temperature, PL observations show two transitions: one near the absorption edge in the ultraviolet (UV) region and the second centered at 640 nm, characteristic of the deep electronic levels in the bandgap. The spectrum at 6 K is dominated by donor bound exciton lines and donor-acceptor pair transitions. LO-phonon replica and two-electron satellite transitions are also observed. These optical characteristics are a signature of good structural quality of the films. c 2008 American Institute of Physics. [DOI: 10.1063/1.3021358]