Ref HAL: hal-00390304_v1
DOI: 10.1063/1.3010309
WoS: 000262534100060
Exporter : BibTex | endNote
8 Citations
Résumé:

The natural aging process of InN nanostructures by the formation of indium oxides is examined by transmission electron microscopy related techniques. Uncapped and GaN-capped InN quantum dots (QDs) on GaN/sapphire substrates were grown under the same conditions and kept at room temperature/pressure conditions. The GaN capping layer is found to preserve the InN QDs in the wurtzite phase, avoiding the formation of group-III oxides, while in the uncapped sample, a thin layer of cubic phases are formed that envelops the nucleus of wurtzite InN. These cubic phases are shown to be mainly bcc-In2O3 for long aged samples where the nitrogen atoms in the InN surface layers have been substituted by atmospheric oxygen. This process implies the gradual transformation of the In sublattice from hcp to a quasi-fcc structure. Metastable zinc-blende InN phases rich in oxygen atoms are proposed to act as intermediate phases and they are evinced in samples less aged. The large concurrence of interplanar spaces, the twin formation, and the existence of a free surface that facilitates the transformation support this mechanism and would explain the high instability of the InN nanostructures at ambient conditions