Résumé:

We address the formalism adapted to calculate the exciton binding energy in type I and type II quantum wells with one marginal potential, using a two parameter trial function and the correction of marginal potential by the self-induced exciton polarisation field. The calculation can be applied to an ecclectical series of semiconductor heterostructures. As an illustration of this versatility, we first give the results we obtain for the type II light-hole exciton in (Ga, InAs)-GaAs, with a marginal light-hole potential. Next we address the ZnSe-ZnS case (marginal conduction potential) and type I heavy-hole and light-hole excitons. The third application we present here concerns the type I light-hole exciton in (Zn, Cd)Se-ZnSe. The improvement of the calculation due to utilisation of the two-parameter trial function is discussed.