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- About the utilization of hydrostatic pressure and uniaxial stress in the physics of semiconductors

Auteur(s): Leroux M, Gil B.

Conference: Symposium on the Claude Benoit a la Guillaume - Radioactive Effects in Semiconductors (PARIS (FRANCE), FR, 1995-04-06)
Actes de conférence: ANNALES DE PHYSIQUE, vol. 20 p.109-117 (1995)


Résumé:

We review the influence of hydrostatic pressure and uniaxial stress on the electronic structure of bulk semiconductors, bound excitons and semiconductor heterostructures. We illustrate the potentialities of such perturbations to give symmetries of quantum states as well as band offsets in heterostructures.