Ref HAL: hal-05295706_v1
DOI: 10.1063/5.0271678
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Résumé:

There is a growing interest in the recent years toward developing wide gap semiconductor nanostructures, and a lot of efforts have been dedicated to ZnO. In order to design core shell structures, a larger bandgap material is needed, which would ideally be similarly environment friendly. ZnS is an interesting possibility and although some efforts were devoted to it in the literature, its properties are not yet fully understood and precisely measured. In this work, we make a thorough analysis of high quality ZnS epilayers, in order to precisely determine the basic optical properties related to excitons and impurities in ZnS. We have made the first precise quantitative determination of residual strain using high-resolution x-ray diffraction. This allows us to demonstrate that, as it was hypothesized in most previous works, thermoelastic strain originating from the layer-substrate expansion coefficient mismatch is responsible for shifts and splitting of exciton photoluminescence lines. The identification of the bound excitons’ optical transitions is analyzed through their temperature/power dependence, in order to precisely assess their exact nature. Combined with the careful determination of donor and acceptor ionization energies in our ZnS sample, we discard the possibility of sodium as the main residual acceptor, as it has often been proposed in the literature.