Ref HAL: hal-00804707_v1
DOI: 10.1016/j.crhy.2010.05.003
WoS: 000284498500002
Exporter : BibTex | endNote
43 Citations
Résumé:

This is an overview of the main physical ideas for application of field effect transistors for generation and detection of Terahertz radiation. Resonant frequencies of the two-dimensional plasma oscillations in FETs increase with the reduction of the channel dimensions and reach the THz range for sub-micron gate lengths. When the mobility is high enough, the dynamics of a short channel FET at THz frequencies is dominated by plasma waves. This may result, on the one hand, in a spontaneous generation of plasma waves by a dc current and on the other hand, in a resonant response to the incoming radiation. In the opposite case, when plasma oscillations are overdamped, the FET can operate as an efficient broadband THz detector.