Ref HAL: hal-00698910_v1
DOI: 10.1002/pssa.201100175
WoS: 000303380700019
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Résumé:

In this work, we present a comprehensive study on the hydrogen impurity depth profiles in InN films with polar c-plane and nonpolar a-plane surface orientations in relation to their structural and free-electron properties. We find that the as-grown nonpolar films exhibit generally higher bulk and near-surface H concentrations compared to the polar InN counter-parts. The latter may be partly associated with a change in the growth mode from 2D to 3D and a decrease in the grain size. Thermal annealing leads to a reduction of H concentrations and the intrinsic H levels are influenced by the structural characteristics of the films. The factors allowing reduction of bulk H and free electron concentrations in a-plane films are discussed. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim