Coexistence of free holes and electrons in InN:Mg with In- and N-growth polarities Auteur(s): Dmowski L, Baj M., Konczewicz L., Suski T., Maude Dk, Grzanka S., Wang X., Yoshikawa A (Article) Publié: Journal Of Applied Physics, vol. 111 p.093719 (2012) Ref HAL: hal-00807514_v1 DOI: 10.1063/1.4710529 WoS: 000304109900068 Exporter : BibTex | endNote 8 Citations Résumé: The coexistence of two types of carriers (free electrons and free holes) in InN:Mg and their competition is demonstrated by the temperature and magnetic-field-induced change of the sign of thermopower (a) as well as the maximum entropy mobility spectrum analysis. The results confirm the existence of alternative carrier channels in addition to the n-type surface inversion layer and p-type bulk. They also show that In-polarity can be propitious for occurrence of p-type conductivity. |