Electron concentration and resistivity in n-GaN at high temperatures up to 1000 K Auteur(s): Litwin-staszewska Elzbieta, Konczewicz L., Piotrzkowski Ryszard, Bockowski M, Grzegory Izabella
Conference: 10th International Conference on Nitride Semiconductors (Wasington, US, 2013-08-25) Résumé: Electron concentration and resistivity in n-GaN at high temperatures up to 1000 K |