Patterned silicon substrates: A common platform for room temperature GaN and ZnO polariton lasers Auteur(s): Zúñiga-Pérez Jesús, Mallet E., Hahe R., Rashid M.J., Bouchoule Sophie, Brimont C., Disseix Pierre, Duboz Jean-Yves, Gomme Guillaume, Guillet T., Jamadi O., Lafosse Xavier, Leroux Mathieu, Leymarie Joël, Li Feng, Réveret François, Semond Fabrice (Article) Publié: Applied Physics Letters, vol. 104 p.241113 (2014) Texte intégral en Openaccess : Ref HAL: hal-01131005_v1 DOI: 10.1063/1.4884120 WoS: 000337915000013 Exporter : BibTex | endNote 21 Citations Résumé: A platform for fabricating polariton lasers operating at room temperature is introduced: nitride-based distributed Bragg reflectors epitaxially grown on patterned silicon substrates. The patterning allows for an enhanced strain relaxation, thereby enabling to stack a large number of crack-free AlN/AlGaN pairs and achieve cavity quality factors of several thousands with a large spatial homogeneity. GaN and ZnO active regions are epitaxially grown thereon, and the cavities are completed with top dielectric Bragg reflectors. The two structures display strong-coupling and polariton lasing at room temperature and constitute an intermediate step in the way towardsintegrated polariton devices. |