Nitrogen Incorporation during Seeded Sublimation Growth of 4H-SiC and 6H-SiC Auteur(s): Tsavdaris Nikolaos, Kwasnicki P., Ariyawong Kanaparin, Valle Nathalie, Peyre H., Sarigiannidou Eirini, Juillaguet S., Chaussende Didier
Conference: ECSCRM (Grenoble, FR, 2014-09-21) Ref HAL: hal-01936649_v1 DOI: 10.4028/www.scientific.net/MSF.821-823.60 Exporter : BibTex | endNote Résumé: Nitrogen Incorporation during Seeded Sublimation Growth of 4H-SiC and 6H-SiC |