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- Ge Addition during 4H-SiC Epitaxial Growth by CVD: Mechanism of Incorporation hal link

Auteur(s): Soulière Véronique, Alassaad Kassem, Cauwet François, Peyre H., Kups Thomas, Pezoldt Jörg, Kwasnicki P., Ferro Gabriel

Conference: 10th European Conference on Silicon Carbide and Related Materials (Grenoble, FR, 2014-09)


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