Ref HAL: hal-01692837_v1
DOI: 10.1063/1.4994634
WoS: WOS:000418349100051
Exporter : BibTex | endNote
1 Citation
Résumé:

We study experimentally low-temperature current-voltage characteristics of n-type GaAs/GaAlAs modulation doped quantum wells under the influence of an external magnetic field. In particular, we use samples doped additionally in the well with Be acceptors. As showed previously, negatively charged acceptor ions can localize conduction electrons by a joint effect of a quantum well and an external magnetic field. It is found that, in the acceptor-doped samples, the Hall field resulting from the presence of magnetic field plays the role of gate voltage. At sufficiently high magnetic fields the drain current has a constant value independent of the drain voltage. It is argued that the above phenomenon is due to the electron localization with the resulting decrease of conducting electron density in the crossed-field configuration. We propose to exploit the observed unusual behaviour as a new device called “magnetic two-dimensional field effect transistor” (M-TEGFET) operating at low temperatures.