Auteur(s): Knap W., Cywinski G., Sypek M., Diakonova N., Coquillat D., Szkudlarek K., Yahniuk I., Archier C., Moulin B., Triki M., Hella M. m., Nodjiadjim V., Riet M., Konczykowska A.
Conference: 2017 19TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS (ICTON) (Girona, ES, 2017-07-02)
Actes de conférence: International Conference on Transparent Optical Networks-ICTON, vol. 978- 1-5386- 085 9-3 p. (2017)
Ref HAL: hal-01882116_v1
WoS: WOS:000427031500208
Exporter : BibTex | endNote
Résumé:
In this paper, an overview of main results concerning THz detection by nanometer field effect transistors (FETs) and heterojunction based transistors (HBTs) is presented. Different GaInAs/InP and GaN/AlGaN nanometer field effect transistors based detectors are presented. We present also first Silicon C-MOS transistors based integrated circuits for wireless communication in sub-THz range. Special attention is given to transistors based focal plane arrays. We show, how these arrays, together with in purpose developed diffractive 3D printed optics lead to construction of the demonstrators of safety and industrial quality control scanners.