Optimizing synthetic diamond samples for quantum sensing technologies by tuning the growth temperature Auteur(s): Chouaieb S., Martinez Luis, Akhtar Waseem, Robert-Philip I., Dréau A., Brinza O., Achard Jocelyne, Tallaire A., Jacques V. (Article) Publié: Diamond And Related Materials, vol. 96 p.85-89 (2019) Texte intégral en Openaccess : Ref HAL: hal-02302063_v1 DOI: 10.1016/j.diamond.2019.04.022 WoS: WOS:000474324600011 Exporter : BibTex | endNote 3 Citations Résumé: Control of the crystalline orientation of nitrogen-vacancy (NV) defects in diamond is here demonstrated by tuning the temperature of chemical vapor deposition (CVD) growth on a (113)-oriented diamond substrate. We show that preferential alignment of NV defects along the [111] axis is improved when the CVD growth temperature is decreased, leading to $79\%$ preferential orientation at 800°C, as compared to only 47.5% at 1000°C. This effect is then combined with temperature-dependent incorporation of NV defects during the CVD growth to obtain preferential alignment over dense ensembles of NV defects spatially localized in thin diamond layers. These results demonstrate that growth temperature can be exploited as an additional degree of freedom to engineer optimized diamond samples for quantum sensing applications.