Novel Scalable Transfer Approach for Discrete III‐Nitride Devices Using Wafer‐Scale Patterned h‐BN/Sapphire Substrate for Pick‐and‐Place Applications (Adv. Mater. Technol. 10/2019) Auteur(s): Ayari Taha, Sundaram Suresh, Bishop Chris, Mballo Adama, Vuong P., Halfaya Yacine, Karrakchou Soufiane, Gautier Simon, Voss Paul, Salvestrini Jean-Paul, Ougazzaden Abdallah (Article) Publié: Advanced Materials Technologies, vol. 4 p.1970057 (2019) Texte intégral en Openaccess : Ref HAL: hal-02321646_v1 DOI: 10.1002/admt.201970057 Exporter : BibTex | endNote Résumé: In article number 1900164 by Abdallah Ougazzaden and co‐workers, III‐Nitride based LEDs have been locally grown on h‐BN and fabricated at a wafer‐scale. This enables a simple and a dicing‐free pick‐and‐place of the devices on a flexible substrate without performance degradation. |