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- Metalorganic Chemical Vapor Phase Epitaxy Growth of Buffer Layers on 3C‐SiC/Si(111) Templates for AlGaN/GaN High Electron Mobility Transistors with Low RF Losses doi link

Auteur(s): Frayssinet Eric, Nguyen Luan, Lesecq Marie, Defrance Nicolas, Garcia barros Maxime, Comyn Rémi, Ngo T. H., Zielinski Marcin, Portail Marc, De Jaeger Jean-Claude, Cordier Yvon

(Article) Publié: Physica Status Solidi A, vol. 217 p.1900760 (2020)
Texte intégral en Openaccess : openaccess