- Broad Diversity of Near-Infrared Single-Photon Emitters in Silicon doi link

Auteur(s): Durand A., Baron Y., Redjem W., Herzig T., Benali A., Pezzagna S., Meijer J., Kuznetsov A. yu., Gérard J.-M., Robert-Philip I., Abbarchi M., Jacques V., Cassabois G., Dréau A.(Corresp.)

(Article) Publié: Physical Review Letters, vol. 126 p.083602 (2021)
Texte intégral en Openaccess : arxiv

Ref HAL: hal-03162094_v1
DOI: 10.1103/PhysRevLett.126.083602
WoS: WOS:000620347900006
Exporter : BibTex | endNote

We report the detection of individual emitters in silicon belonging to seven different families of optically active point defects. These fluorescent centers are created by carbon implantation of a commercial silicon- on-insulator wafer usually employed for integrated photonics. Single photon emission is demonstrated over the 1.1–1.55 μm range, spanning the O and C telecom bands. We analyze their photoluminescence spectra, dipolar emissions, and optical relaxation dynamics at 10 K. For a specific family, we show a constant emission intensity at saturation from 10 K to temperatures well above the 77 K liquid nitrogen temperature. Given the advanced control over nanofabrication and integration in silicon, these individual artificial atoms are promising systems to investigate for Si-based quantum technologies.