Quantum-dot single-electron transistor as thermoelectric quantum detectors at terahertz frequencies Auteur(s): Asgari Mahdi, Coquillat D., Menichetti Guido, Zannier Valentina, Diakonova N., Knap W., Sorba Lucia, Viti Leonardo, Vitiello Miriam Serena (Article) Publié: Nano Letters, vol. 21 p.8587-8594 (2021) Texte intégral en Openaccess : Ref HAL: hal-03448548_v1 Ref Arxiv: 2109.04948 DOI: 10.1021/acs.nanolett.1c02022 Ref. & Cit.: NASA ADS Exporter : BibTex | endNote Résumé: Low dimensional nano-systems are promising candidates for manipulating, controlling and capturing photons with large sensitivities and low-noise. If quantum engineered to tailor the energy of the localized electrons across the desired frequency range, they can allow devising efficient quantum sensors across any frequency domain. Here, we exploit the rich few-electrons physics to develop millimeter-wave nanodetectors employing as sensing element an InAs/InAs0.3P0.7 quantum-dot nanowire, embedded in a single electron transistor. Once irradiated with light the deeply localized quantum element exhibits an extra electromotive force driven by the photothermoelectric effect, which is exploited to efficiently sense radiation at 0.6 THz with a noise equivalent power < 8 pWHz-1/2 and almost zero dark current. The achieved results open intriguing perspectives for quantum key distributions, quantum communications and quantum cryptography at terahertz frequencies. |