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- Low frequency noise in P-InAsSbP/n-InAs infrared light emitting diode-photodiode pairs doi link

Auteur(s): Diakonova N., Karandashev S.A., Levinshtein M.E., Matveev B.A., Remennyi M.A., Usikova A.A.

(Article) Publié: Infrared Physics Technology, vol. 117 p.103867 (2021)
Texte intégral en Openaccess : openaccess


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DOI: 10.1016/j.infrared.2021.103867
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Résumé:

Low frequency noise in P-InAsSbP/n-InAs infrared light emitting diode- photodiode pairs is investigated for the first time at 300 K. It is shown that photocurrent fluctuations under LED illumination are smaller than photocurrent fluctuations under a black body illumination. When the photodiode is illuminated by LED, the spectral noise density follows the 1/f dependence. In the case of a black body illumination we observe a significant contribution of generation-recombination noise.