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- Single G centers in silicon fabricated by co-implantation with carbon and proton arxiv link

Auteur(s): Baron Y., Durand A., Herzig Tobias, Khoury Mario, Pezzagna Sébastien, Meijer Jan, Robert-Philip I., Abbarchi Marco, Hartmann Jean-Michel, Reboh Shay, Gérard Jean-Michel, Jacques V., Cassabois G., Dréau A.

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Texte intégral en Openaccess : arxiv


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Résumé:

We report the fabrication of G centers in silicon with an areal density compatible with single photon emission at optical telecommunication wavelengths. Our sample is made from a silicon-on-insulator wafer which is locally implanted with carbon ions and protons at various fluences. Decreasing the implantation fluences enables to gradually switch from large ensembles to isolated single defects, reaching areal densities of G centers down to $\sim$0.2 $\mu$m$^{-2}$. Single defect creation is demonstrated by photon antibunching in intensity-correlation experiments, thus establishing our approach as a reproducible procedure for generating single artificial atoms in silicon for quantum technologies.