Disorder-induced topological phase transition in HgCdTe crystals Auteur(s): Krishtopenko S., Antezza M., Teppe F. (Article) Publié: Physical Review B, vol. 106 p.115203 (2022) Texte intégral en Openaccess : Ref HAL: hal-03783120_v1 Ref Arxiv: 2206.14561 DOI: 10.1103/PhysRevB.106.115203 Ref. & Cit.: NASA ADS Exporter : BibTex | endNote Résumé: Using the self-consistent Born approximation, we study a topological phase transition appearing in bulk HgCdTe crystals induced uncorrelated disorder due to both randomly distributed impurities and fluctuations in Cd composition. By following the density-of-states evolution, we clearly demonstrate the topological phase transition, which can be understood in terms of the disorder-renormalized mass of Kane fermions. We find that the presence of a heavy-hole band in HgCdTe crystals leads to the topological phase transition at much lower disorder strength than is expected for conventional three-dimensional topological insulators. Our theoretical results can also be applied to other narrow-gap zinc-blende semiconductors such as InAs, InSb, and their ternary alloys InAsSb. Commentaires: 8 pages, 4 figures |