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- Disorder-induced topological phase transition in HgCdTe crystals doi link

Auteur(s): Krishtopenko S., Antezza M., Teppe F.(Corresp.)

(Article) Publié: -Physical Review B Condensed Matter (1978-1997), vol. 106 p.115203 (2022)
Texte intégral en Openaccess : arxiv


Ref HAL: hal-03783120_v1
Ref Arxiv: 2206.14561
DOI: 10.1103/PhysRevB.106.115203
Ref. & Cit.: NASA ADS
Exporter : BibTex | endNote
Résumé:

Using the self-consistent Born approximation, we study a topological phase transition appearing in bulk HgCdTe crystals induced uncorrelated disorder due to both randomly distributed impurities and fluctuations in Cd composition. By following the density-of-states evolution, we clearly demonstrate the topological phase transition, which can be understood in terms of the disorder-renormalized mass of Kane fermions. We find that the presence of a heavy-hole band in HgCdTe crystals leads to the topological phase transition at much lower disorder strength than is expected for conventional three-dimensional topological insulators. Our theoretical results can also be applied to other narrow-gap zinc-blende semiconductors such as InAs, InSb, and their ternary alloys InAsSb.