Auteur(s): Caillier Christophe, Ayari Anthony, Gouttenoire Vincent, Benoit Jean-Michel, Jourdain V., Picher Matthieu, Paillet M., Le Floch Sylvie, Purcell Stephen T., Sauvajol J.-L., Miguel Alfonso San
(Article) Publié:
Advanced Functional Materials, vol. 20 p.3330-3335 (2010)
Texte intégral en Openaccess : 
Ref HAL: hal-00534234_v1
DOI: 10.1002/adfm.201000398
WoS: 000283386400016
Exporter : BibTex | endNote
12 Citations
Résumé:
A transistor based on an individual multiwalled carbon nanotube is studied under high-pressure up to 1 GPa. Dramatic effects are observed, such as the lowering of the Schottky barrier at the gold-nanotube contacts, the enhancement of the intertube conductance, including a discontinuity related to a structural transition, and the decrease of the gate hysteresis of the device.