Auteur(s): Dyakonova N., Dyakonov M., El Fatimy A., Lusakowski J., Knap W., Bollaert S., Shchepetov A., Roelens Y., Gaquiere Ch., Theron D., Cappy A., Poisson M.-A., Morvan E.
(Article) Publié: Applied Physics Letters, vol. 88 p.141906 (2006)
Ref HAL: hal-00264792_v1
DOI: 10.1063/1.2191421
WoS: 000236612000021
Exporter : BibTex | endNote
127 Citations
Résumé:
Room-temperature generation of terahertz radiation in nanometer gate length InAlAs/InGaAs and AlGaN/GaN high-mobility transistors is reported. A well-defined source-drain voltage threshold for the emission exists, which depends on the gate bias. Spectral analysis of the emitted radiation is presented. The highest emission power emitted from a single device reached 0.1 µW.