Auteur(s): Knap W., Dyakonov M., Coquillat D., Teppe F., Dyakonova N., Łusakowski J., Karpierz K., Sakowicz M., Valusis G., Seliuta D., Kasalynas I., Fatimy A. El, Meziani Y., Otsuji T.
(Article) Publié:
Journal Of Infrared, Millimeter And Terahertz Waves, vol. 30 p.1319-1337 (2009)
Texte intégral en Openaccess : 
Ref HAL: hal-00430452_v1
Ref Arxiv: 0907.2523
DOI: 10.1007/s10762-009-9564-9
WoS: 000269913200008
Ref. & Cit.: NASA ADS
Exporter : BibTex | endNote
296 Citations
Résumé:
Resonant frequencies of the two-dimensional plasma in FETs increase with the reduction of the channel dimensions and can reach the THz range for sub-micron gate lengths. Nonlinear properties of the electron plasma in the transistor channel can be used for the detection and mixing of THz frequencies. At cryogenic temperatures resonant and gate voltage tunable detection related to plasma waves resonances, is observed. At room temperature, when plasma oscillations are overdamped, the FET can operate as an efficient broadband THz detector. We present the main theoretical and experimental results on THz detection by FETs in the context of their possible application for THz imaging.
Commentaires: 22 pages, 12 figures, review paper