Sommaire:

Large-scale growth of high-quality hexagonal boron nitride (h-BN) has been a challenge in two-dimensional (2D)-material-based electronic and energy devices. In this talk, I will demonstrate wafer-scale and wrinkle-free epitaxial growth of multi-layer h-BN on a sapphire substrate by using high-temperature and low-pressure chemical vapor deposition. Microscopic and spectroscopic investigations and theoretical calculations reveal that synthesized h-BN has a single rotational orientation with Bernal stacking order. A facile method for transferring h-BN onto other target substrates were developed, which provides the opportunity for using h-BN as a substrate in practical electronic circuits. A graphene field effect transistor fabricated on our h-BN sheets shows highly improved carrier mobility, because the ultra-flatness of the h-BN surface can reduce the substrate-induced degradation of the carrier mobility of 2D materials. And, I will show some potential applications of h-BN for a substrate to grow transition metal dichalcogenides (TMDs), such as MoS2, MoSe2, WS2, and WSe2 which can be used for electrocatalysts, a shell layer capping Au nanoparticles in surface-enhance Raman scattering, an encapsulation (or passivation) layer to protect unstable TMDs, and a proton exchange membrane to replace the Nafion film in a polymer electrolyte membrane (PEM) fuel cell. Lastly, I will demonstrate spatially controlled conversion of h-BN to graphene on an array of Pt nanoparticles to realize an array of uniform graphene quantum dots (GQDs) embedded in an h-BN sheet.

Pour plus d'informations, merci de contacter Cassabois G.