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(313) Production(s) de KNAP W.
Device loading effect on nonresonant detection of terahertz radiation in dual grating gate plasmon-resonant structure using InGaP/InGaAs/GaAs material systems Auteur(s): El moutaouakil Amine, Suemitsu Tetsuya, Otsuji Taiichi, Videlier H., Boubanga-tombet Stephane-albon, Coquillat D., Knap W.
Conference: 37th International Symposium on Compound Semiconductors (ISCS) ((JAPAN), FR, 2010-05-31) |
Plasmonic terahertz detection by a double-grating-gate field-effect transistor structure with an asymmetric unit cell Auteur(s): Popov V. V., Fateev D. V., Otsuji T., Meziani Y. M., Coquillat D., Knap W. (Article) Publié: Applied Physics Letters, vol. 99 p.243504 (2011) Texte intégral en Openaccess : |
Broadband terahertz imaging with highly sensitive silicon CMOS detectors Auteur(s): Schuster Franz, Coquillat D., Videlier H., Sakowicz Maciej, Teppe F., Dussopt Laurent, Giffard Benoit, Skotnicki Thomas, Knap W. (Article) Publié: Optics Express, vol. 19 p.7827-7832 (2011) Texte intégral en Openaccess : |
Terahertz Detection by Field Effect Transistors for Security Imaging Auteur(s): Knap W., Teppe F., Consejo C., Chenaud B., Torres J., Solignac P., Wasilewski Z. R., Zholudev M., Diakonova N., Coquillat D., Buzatu P., El Fatimy A., Schuster F., Videlier H., Sakowicz M., Giffard B., Skotnicki T., Palma F.
Conference: TERAHERTZ PHYSICS, DEVICES, AND SYSTEMS V: ADVANCE APPLICATIONS IN INDUSTRY AND DEFENSE (Orlando, US, 2011-04-25) |
Terahertz responsivity of field effect transistors versus their static channel conductivity and loading effects Auteur(s): Sakowicz M., Lifshits M., Klimenko O., Schuster F., Coquillat D., Teppe F., Knap W. (Article) Publié: Journal Of Applied Physics, vol. 110 p.4512 (2011) Texte intégral en Openaccess : |
"Terahertz electronic and optoelectronic components and systems: Foreword" Auteur(s): Coutaz J.-L., Knap W., Komyama S., Ito H. (Article) Publié: Comptes Rendus Physique, vol. 11 p.411-412 (2010) |
Non-resonant terahertz detection in strained-Si modulation doped field effect transistors: first terahertz imaging Auteur(s): Garcia E., Meziani Y. m., Velasques J.e., Coquillat D., Diakonova N., Knap W., Grigelionis I., Fobelets K.
Conference: International TeraNano &GDRI Workshop (, JP, 2010-11-24) |