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(313) Production(s) de KNAP W.
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Terahertz Plasma Wave Excitations in twodimensional nanometer systems 
Auteur(s): Knap W.
Conférence invité: International Conference on Nanoscience and Nanotechnology (Novesibirsk, RU, 2007)
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Terahertz Plasma Wave Excitations in Nitrides
Auteur(s): Knap W.
Conférence invité: International Workshop on Physics of Bulk Nitrides (Sao Paolo, BR, 2007)
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Low electron mobility of field-effect transistor determined by modulated magnetoresistance
Auteur(s): Tauk R., Lusakowski J., Knap W., Tiberj A., Bougrioua Z., Azize M., Lorenzini P., Sakowicz M., Karpierz K., Fenouillet-Beranger C., Casse M., Gallon C., Boeuf F., Skotnicki T.
(Article) Publié:
Journal Of Applied Physics, vol. 102 p.103701.1 (2007)
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Plasma wave resonant detection of terahertz radiations by nanometric transistors
Auteur(s): Knap W., Fatimy A., Torres J., Teppe F., Orlov M., Gavrilenko V.
Conference: 16th Ural International Winter School on Physics of Semiconductors (Kyshtym, RU, 2006-02-27)
Actes de conférence: Fizika Nizkikh Temperatur, vol. 33 p.388 (2007)
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Plasma wave resonant detection of terahertz radiations by nanometric transistors
Auteur(s): Knap W., El Fatimy A., Torres Jeremi, Teppe F., Orlov M., Gavrilenko V.
(Article) Publié:
Low Temperature Physics, vol. 33 p.291-294 (2007)
Texte intégral en Openaccess : 
Ref HAL: hal-00324329_v1
DOI: 10.1063/1.2719970
WoS: 000245900300032
Exporter : BibTex | endNote
13 Citations
Résumé: We report on resonant terahertz detection by the two-dimensional electron plasma in nanometric InGaAs and GaN transistors. Up to now, the majority of research has been devoted to GaAs-based devices as the most promising from the point of view of the electron mobility. However, resonant detection has been reported only in the sub-THz range. According to the predictions of the Dyakonov–Shur plasma wave detection theory, an increase of the detection frequency can be achieved by reducing the length or increasing the carrier density in the gated region. We demonstrate that the 1 THz limit can be overcome by using ultimately short-gate InGaAs and GaN nanotransistors. For the first time the tunability of the resonant signal by the applied gate voltage is demonstrated. We show that the physical mechanism of the detection is related to the plasma waves excited in the transistor channel (Dyakonov–Shur theory). We also show that increasing of the drain-to-source current leads to a transformation of the broadband detection to a resonant and tuneable one. We can get resonant detection at room temperature. We finally discuss the possible application of detection by nanotransistors in different types of THz spectroscopy research.
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Low temperature electron mobility and concentration under the gate of AlGaN/GaN field effect transistors
Auteur(s): Sakowicz M., Tauk R., Lusakowski J., Tiberj A., Knap W., Bougrioua Z., Azize M., Lorenzini P., Karpierz K., Grynberg M.
(Article) Publié:
Journal Of Applied Physics, vol. 100 p.113726 (2006)
Ref HAL: hal-00543860_v1
DOI: 10.1063/1.2353786
WoS: 000242887400096
Exporter : BibTex | endNote
8 Citations
Résumé: High electron mobility field effect transistors were fabricated on AlGaN/GaN heterostructures and their magnetoresistance was measured at 4.2 K up to 10 T with simultaneous modulation of the gate potential. Low and high magnetic field data were used to determine the electron mobility (mu) and concentration (n), respectively, in the gated part of the transistor channel. With these measurements we present a method to determine mu and n under the gate of a transistor, which does not require knowledge of the transistor gate length, access resistance, threshold voltage, or capacitance. We discuss applications of this method for nanometer and ballistic transistors. (c) 2006 American Institute of Physics.
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Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power
Auteur(s): Tauk R., Teppe F., Boubanga tombet Stephane, Coquillat D., Knap W., Meziani Y. M., Gallon C., Boeuf F., Skotnicki T., Fenouillet-Beranger C., Maude D. K., Rumyantsev S., Shur M. S.
(Article) Publié:
Applied Physics Letters, vol. 89 p.253511 (2006)
Ref HAL: hal-00541599_v1
DOI: 10.1063/1.2410215
WoS: 000243415200116
Exporter : BibTex | endNote
294 Citations
Résumé: Si metal oxide semiconductor field effect transistors (MOSFETs) with the gate lengths of 120-300 nm have been studied as room temperature plasma wave detectors of 0.7 THz electromagnetic radiation. In agreement with the plasma wave detection theory, the response was found to depend on the gate length and the gate bias. The obtained values of responsivity (<= 200 V/W) and noise equivalent power (>= 10(-10) W/Hz(0.5)) demonstrate the potential of Si MOSFETs as sensitive detectors of terahertz radiation. (c) 2006 American Institute of Physics.
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