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(313) Production(s) de KNAP W.
Terahertz emission and detection by plasma waves in nanometer size field effect transistors Auteur(s): Knap W., Lusakowski Jerzy, Teppe F., Diakonova N., El Fatimy A.
Conference: 6th Topical Workshop on Heterostructure Microelectronics (TWHM 2005) (Awaji Isl (JAPAN), FR, 2005-08) |
Terahertz detection by GaN/AlGaN transistors Auteur(s): El Fatimy A., Boubanga tombet Stephane, Teppe F., Knap W., Veksler D. b., Rumyantsev S., Shur M. s., Pala N., Gaska R., Fareed Q., Hu X., Seliuta D., Valusis G., Gaquiere C., Theron D., Cappy A. (Article) Publié: Electronics Letters, vol. 42 p.1342-1344 (2006) |
Detection of terahertz radiation in gated two-dimensional structures governed by dc current Auteur(s): Veksler D, Teppe F., Dmitriev Ap, Kachorovskii Vy, Knap W., Shur Ms (Article) Publié: Physical Review B, vol. 73 p.125328 (2006) |
Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors Auteur(s): El Fatimy A., Teppe F., Diakonova N., Knap W., Seliuta D., Valusis G., Shchepetov A., Roelens Y., Bollaert S., Cappy A., Rumyantsev S. (Article) Publié: Applied Physics Letters, vol. 89 p.131926 (2006) |
Superconductivity of InN with a well defined Fermi surface Auteur(s): Inushima T., Kato N., Maude D. K., Lu Hai, Schaff W. J., Tauk R., Meziani Y., Ruffenach S., Briot O., Knap W., Gil B., Miwa H., Yamamoto A., Muto D., Nanishi Y., Higashiwaki M., Matsui T.
Conference: 6th International Conference on Nitride Semiconductors (ICNS-6) (Bremen (GERMANY), DE, 2005-08-28) |
Terahertz Plasma GaN Devices Auteur(s): Knap W.
Conférence invité: MIKON 2006, Workshop on GaN Devices, May 25 2006, Krakow Poland (Krakow, PL, 2006) |
Terahertz Plasma Wave Devices based on GaN high electron mobility transistors Auteur(s): Knap W.
Conférence invité: European Workshop on III-Nitride semiconductor Material and devices, (Heraklion, GR, 2006) |