In this work we report on the response of asymmetric graphene based devices to subterahertz and terahertz radiation. Our devices are made in a configuration of a field-effect transistor with conduction channel between the source and drain electrodes formed with a CVD-grown graphene. The radiation is coupled through a spiral antenna to source and top gate electrodes. Room temperature responsivity of our devices is close to the values that are attractive for commercial applications. Further optimization of the device configuration may result in appearance of novel terahertz radiation detectors.

The first room-temperature terahertz (THz)-frequency nanodetector exploiting a 10 nm thick flake of exfoliated crystalline black phosphorus as an active channel of a field-effect transistor, is devised. By engineering and embedding planar THz antennas for efficient light harvesting, the authors provide the first technological demonstration of a phosphorus-based active THz device.

We report on the photoresponse dependence on the terahertz radiation intensity in ALGaN/GaN HEMTs. We show that the ALGaN/GaN HEMT can be used as a THz detector in CW and in pulsed regime up to radiation intensity of several kW/cm2. The dynamic range in the pulsed regime of detection can be more than 2 decades. We observed that the photoresponse of the HEMT could have a compound composition if two independent parts of the transistor are involved in the detection process; this result indicates that a more simple one channel device may be preferable on the detection purpose.

We study theoretically and experimentally the plasmonic THz detection by the asymmetric dual-grating-gate HEMT at room temperature without source-to-drain bias. We derive the analytical expressions of photocurrents due to the plasmonic drag and ratchet effects, and we discuss about their frequency dependences. We also compare the theory to the experimentally obtained frequency dependence. It is demonstrated that they agree qualitatively well.

One-dimensional (1D) nanostructure devices are at the frontline of studies on future electronics, although issues like massive parallelization, doping control, surface effects, and compatibility with silicon industrial requirements are still open challenges. The recent rogresses in atomic to nanometer scale control of materials morphology, size, and composition including the growth of axial, radial and branched nanowirebased heterostructures, make the nanowire (NW) an ideal building block for implementing rectifying diodes or detectors that could be well operated into the Terahertz (THz), thanks to their typical achievable attofarad order capacitance. Here, we report on our recent progresses in the development of 1D InAs or InAs/InSb NW-based field effect transistors (FETs) exploiting novel morphologies and/or material combinations effective for addressing the goal of a semiconductor plasma-wave THz detector array technology. Through a critical review of material-related parameters (NW doping concentration, geometry and/or material choice) and antenna-related issues, here we underline the crucial aspects that can affect detection performance across the THz frequency region.