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(94) Production(s) de CONTRERAS S.
Electrical transport properties of p-type 4H-SiC Auteur(s): Contreras S., Konczewicz L., Arvinte Roxana, Peyre H., Chassagne Thierry, Zielinski Marcin, Juillaguet S.
Conférence invité: E-MRS : Wide bandgap materials for electron devices (Lille, FR, 2016-05-02) |
Growth of low doped monolayer graphene on SiC(0001) viasublimation at low argon pressure Auteur(s): Landois P., Wang T., Nachawaty A., Bayle M., Decams J.M., Desrat W., Zahab A. A., Jouault B., Paillet M., Contreras S. (Article) Publié: Physical Chemistry Chemical Physics, vol. p.10.1039/c7cp01012e (2017) |
Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC Auteur(s): Contreras S., Konczewicz L., Kwasnicki P., Arvinte Roxana, Peyre H., Chassagne Thierry, Zielinski Marcin, Kayambaki Maria, Juillaguet S., Zekentes Konstantinos
Conference: 16th International Conference on Silicon Carbide and Related Materials (Catane, IT, 2015-10-05) |
p-Type Doping of 4H- and 3C-SiC Epitaxial Layers with Aluminum Auteur(s): Zielinski Marc, Arvinte Roxana, Chassagne Thierry, Michon Adrien, Portail Marc, Kwasnicki P., Konczewicz L., Contreras S., Juillaguet S., Peyre H.
Conference: ICSCRM (Giardini Naxos, FR, 2015-10-02) |
Hall effect measurement from basic concept to electrical counter,
S. Contreras Auteur(s): Contreras S. (Séminaires) Holiday Inn Express -Odysseum 2 (Montpellier, FR), 2016-09-02 |
Growth of p-type monolayer graphene on SiC (0001) via sublimation at low argon pressure Auteur(s): Wang T., Landois P., Bayle M., Nachawaty A., Desrat W., Huntzinger J.-R., Paillet M., Jouault B., Contreras S. (Affiches/Poster) GDR (Oleron, FR), 2016-10-09 |
High temperature electrical transport study of Si-doped AlN Auteur(s): Contreras S., Konczewicz L., Ben Messaoud Jaweb, Peyre H., Al Khalfioui Mohamed, Matta S., Leroux Mathieu, Damilano Benjamin, Brault Julien (Article) Publié: Superlattices And Microstructures, vol. 98 p.253-258 (2016) |