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Study of Geometrical Effects in Charge Pumping Current for Lateral SiC nMOSFETs Electrical Characterization 
Auteur(s): Florentin Matthieu, Rafi Joan Marc, Chevalier Florian, Soler Victor, Konczewicz L., Contreras S., Juillaguet S., Montserrat Josep, Godignon Philippe
Conference: 10th European Conference on Silicon Carbide and Related Materials (Grenoble, FR, 2014-09)
Actes de conférence: Material Sciences Forum, vol. 821-823 p.717 - 720 (2015)
Ref HAL: hal-01936637_v1
DOI: 10.4028/www.scientific.net/MSF.821-823.717
Exporter : BibTex | endNote
Résumé: In this work, a charge pumping characterization has been carried out on 4H-SiC nMOSFETs built with different SiC doping processes. Because charge pumping (CP) measurements on SiC are complex to implement, three different CP methods have been used for Dit characterization. The impact of geometrical and electrical parameters on each method is studied. Finally, it is detailed the full measurement flow chosen for a deeper and more accurate understanding of Dit electrical characterization.
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Non-trivial Berry phase in the Cd3As2 3D Dirac semimetal
Auteur(s): Desrat W. , Consejo C., Teppe F., Contreras S., Marcinkiewicz M., Knap W., Nateprov A., Arushanov E.
Conference: EDISON 19 (Salamanca, ES, 2015-06-29)
Texte intégral en Openaccess : 
Ref HAL: hal-01932656_v1
DOI: 10.1088/1742-6596/647/1/012064
WoS: 000366236800064
Exporter : BibTex | endNote
8 Citations
Résumé: We present magnetotransport measurements performed on Cd3As2 samples. Our results confirm the existence of 3D Dirac fermions in this material with a π Berry phase. A metal-insulator transition driven by the magnetic field is also observed for B < 1 T. Finally the in situ rotation of the sample reveals that the Fermi surface is a weakly anisotropic ellipsoid.
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Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly P-Typed Doped 4H-SiC Layer Selectively Grown by VLS Transport
Auteur(s): Thierry-Jebali Nicolas, Vo-Ha Arthur, Carole Davy, Lazar Mihai, Ferro Gabriel, Peyre H., Contreras S., Brosselard Pierre
Conference: HeteroSiC-WASMPE (Nice, FR, 2013-06-17)
Actes de conférence: Materials Science Forum, vol. 806 p.57 - 60 (2015)
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Studying the number of graphene layers on copper substrate
Auteur(s): Landois P., Bayle M., Decams J.M., Dieraert Axel, Huntzinger J.-R., Wang T., Peyre H., Jouault B., Zahab A. A., Paillet M., Contreras S.
(Affiches/Poster)
GDR-GNT (Aussois, FR), 2015-11-29
Ref HAL: hal-01340108_v1
Exporter : BibTex | endNote
Résumé: Counting number of graphene layers on copper ? (OK for SiO2/Si, SiC, glass)Graphene source in Montpellier by CVD on copper and on SiC and by SiC sublimation (development of prototype furnace)
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Midwave infrared InAs/GaSb superlattice photodiode with a dopant-free p-n junction
Auteur(s): Delmas M., Rodriguez J. B., Taalat R., Konczewicz L., Desrat W., Contreras S., Giard E., Ribet-Mohamed I., Christol Philippe
Conference: 8th International Workshop on Quantum Structure Infrared Photodetectors (QSIP) (Santa Fe, US, 2014-06-29)
Texte intégral en Openaccess :
Ref HAL: hal-01216731_v1
DOI: 10.1016/j.infrared.2014.09.036
WoS: WOS:000357234000017
Exporter : BibTex | endNote
3 Citations
Résumé: Midwave infrared (MWIR) InAs/GaSb superlattice (SL) photodiode with a dopant-free p–n junction was fabricated by molecular beam epitaxy on GaSb substrate. Depending on the thickness ratio between InAs and GaSb layers in the SL period, the residual background carriers of this adjustable material can be either n-type or p-type. Using this flexibility in residual doping of the SL material, the p–n junction of the device is made with different non-intentionally doped (nid) SL structures. The SL photodiode processed shows a cut-off wavelength at 4.65 μm at 77 K, residual carrier concentration equal to 1.75 × 1015 cm−3, dark current density as low as 2.8 × 10−8 A/cm2 at 50 mV reverse bias and R0A product as high as 2 × 106 Ω cm2. The results obtained demonstrate the possibility to fabricate a SL pin photodiode without intentional doping the pn junction.
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Applications of Vapor-Liquid-Solid Selective Epitaxy of Highly p-type Doped 4H-SiC: PiN Diodes with Peripheral Protection and Improvement of Specific Contact Resistance of Ohmic Contacts
Auteur(s): Thierry-Jebali Nicolas, Lazar Mihai, Vo-Ha A., Carole D., Soulière V., Henry A, Planson Dominique, Ferro Gabriel, Konczewicz L., Contreras S., Brylinski C., Brosselard Pierre
(Article) Publié:
Materials Science Forum, vol. p. (2014)
Texte intégral en Openaccess :
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