Accueil > Production scientifique
(94) Production(s) de CONTRERAS S.
La spectrométrie Raman comme outil pour l'étude du dopage du graphène Auteur(s): Paillet M., Parret R., Rubio-Roy Miguel, Tiberj A., Huntzinger J.-R., Landois P., Mikolasek Mirko, Contreras S., Sauvajol J.-L., Dujardin Erik, Zahab A. A.
Conference: Matériaux 2014 (Montpellier, FR, 2014-11-24) |
Raman Investigation of Heavily Al Doped 4H-SiC Layers Grown by CVD Auteur(s): Kwasnicki P., Arvinte Roxana, Peyre H., Zielinski Marcin, Konczewicz L., Contreras S., Camassel J., Juillaguet S.
Conference: HETEROSIC 2013 (nice, FR, 2013-06) |
Applications of Vapor-Liquid-Solid Selective Epitaxy of Highly p-Type Doped 4H-SiC: PiN Diodes with Peripheral Protection and Improvement of Specific Contact Resistance of Ohmic Contacts Auteur(s): Thierry-Jebali Nicolas, Lazar Mihai, Vo-Ha Arthur, Carole Davy, Soulière Véronique, Henry Anne, Planson Dominique, Ferro Gabriel, Konczewicz L., Contreras S., Brylinski Christian, Brosselard Pierre
Conference: CSCRM (Miyazaki, JP, 2013-09-29) |
Reversible optical doping of graphene Auteur(s): Tiberj A., Rubio-Roy Miguel, Paillet M., Huntzinger J.-R., Landois P., Mikolasek Mirko, Contreras S., Sauvajol J.-L., Dujardin Erik, Zahab A. A. (Article) Publié: Scientific Reports, vol. 3 p. (2013) Texte intégral en Openaccess : |
Raman spectroscopy as a tool to study the doping of graphene Auteur(s): Tiberj A., Rubio-Roy Miguel, Parret R., Paillet M., Huntzinger J.-R., Nakabayashi D., Landois P., Michel T., Mikolasek Mirko, Contreras S., Sauvajol J.-L., Dujardin Erik, Zahab A. A.
Conférence invité: Nanospain Conference 2014 (, ES, 2014-03-11) |
Pressure studies of multicarrier conduction in undoped InN grown on GaN buffer Auteur(s): Dmowski H., Konczewicz L., Suski T., Contreras S., Lu H., Schaff W.
Conference: HPSP 2012 (Montpellier, FR, 2012-07-25) |
Magnetotransport studies of AlGaN/GaN heterostructures with two-dimensional electron gas in parallel with a three-dimensional Al-graded layer: Incorrect hole type determination Auteur(s): Desrat W., Contreras S., Konczewicz L., Jouault B., Chmielowska M., Chenot S., Cordier Y. (Article) Publié: Journal Of Applied Physics, vol. 114 p.023704 (2013) |