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Low Temperature Photoluminescence Investigation of 3-inch SiC Wafers for Power Device Applications
Auteur(s): Peyre H., Sun Jianwu, Guelfucci Jude, Juillaguet S., Hassan J., Henry Anne, Contreras S., Brosselard Pierre, Camassel J.
Conference: HeteroSiC & WASMPE 2011 (TOURS, FR, 2011-06-27)
Ref HAL: hal-00655897_v1
DOI: 10.4028/www.scientific.net/MSF.711.164
WoS: 000302673900030
Exporter : BibTex | endNote
1 Citation
Résumé: Focusing on the change in aluminium-related photoluminescence lines in 4H-SiC versus doping concentration, we have used a combination of LTPL (Low Temperature PhotoLuminescence) and secondary ion mass spectrometry measurements to set new calibration curves. In this way, one can probe the change in aluminum concentration in the range 10^17 to 10^19 cm^-3. When applied to LTPL maps collected on full 3-inch wafers, we show that such abacuses constitute a powerful tool to control efficiently the doping level of as-grown p+ (emitters) and p++ (contact) layers for power device applications.
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Electronic Properties of InAs/GaSb Superlattice Detectors to Evaluate High Temperature Operation.
Auteur(s): Christol P., Cervera C., Chaghi R., Ait-Kaci H., Rodriguez J. B., Konczewicz L., Contreras S., Jaworowicz K., Ribet-Mohamed I.
Conference: Conference On Quantum Sensing and Nanophotonic Devices VII (San Francisco (CA), FR, 2010-01-24)
Actes de conférence: QUANTUM SENSING AND NANOPHOTONIC DEVICES VII, vol. 7608 p.76081U (2010)
Ref HAL: hal-00543643_v1
Exporter : BibTex | endNote
Résumé: Electrical properties of non-intentionally doped (nid) InAs/GaSb Superlattice (SL) structures and p-nid-n detectors grown by Molecular Beam Epitaxy on GaSb substrate are reported. The SL structures were made of 600 periods of 8 InAs monolayers (MLs) and 8 GaSb MLs, for a total thickness of 3 mu m. This structure exhibited a cutoff wavelength in the midwave infrared (MWIR) domain, near 4.7 mu m at 80K. Electrical transport measurements, based on resistivity and Hall Effect measurements, were performed on SL structure after removing the conducting GaSb substrate with an appropriate technological process. Carrier concentrations and mobilities carried out as a function of temperature (77-300K) for magnetic fields in the 0-1 Tesla range are analyzed. A change in type of conductivity is observed. The nid SL layers is p-type at liquid Nitrogen temperature while is n-type at room temperature. These results are completed with diode characterizations based on current-voltage (I-V) and capacitance-voltage (C-V) measurements performed on p-nid-n devices with identical InAs/GaSb SL active zone.
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Unambiguous determination of carrier concentration and mobility for InAs/GaSb superlattice photodiode optimization
Auteur(s): Cervera C., Rodriguez J. B., Perez J. P., Ait-Kaci H., Chaghi R., Konczewicz L., Contreras S., Christol P.
(Article) Publié:
Journal Of Applied Physics, vol. 106 p.033709 (2009)
Ref HAL: hal-00536295_v1
DOI: 10.1063/1.3191175
WoS: 000269060700046
Exporter : BibTex | endNote
48 Citations
Résumé: In this communication we report on electrical properties of nonintentionally doped (nid) type II InAs/GaSb superlattice grown by molecular beam epitaxy. We present a simple technological process which, thanks to the suppression of substrate, allows direct Hall measurement on superlattice structures grown on conductive GaSb substrate. Two samples were used to characterize the transport: one grown on a semi-insulating GaAs substrate and another grown on n-GaSb substrate where a etch stop layer was inserted to remove the conductive substrate. Mobilities and carrier concentrations have been measured as a function of temperature (77-300 K), and compared with capacitance-voltage characteristic at 80 K of a photodiode comprising a similar nid superlattice.
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High temperature behaviour of AlGaN/AlN/GaN Hall-FET sensors
Auteur(s): Bouguen Laure, Konczewicz L., Contreras S., Jouault B., Camassel J., Cordier Y.
Conference: 9th International Workshop on Expert Evaluation and Control Compound Semiconductor Materials and Technologies (Lodz (POLAND), FR, 2008-06-01)
Actes de conférence: MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, vol. 165 p.1-4 (2009)
Ref HAL: hal-00536293_v1
Exporter : BibTex | endNote
Résumé: We present a detailed investigation of the different factors that rule the temperature dependence of the AlGaN/AlN/GaN Hall-FET devices in the temperature range 300-500 degrees C. To understand the origin of the apparent increase in drive-in current density which affects devices above 300 degrees C, several series of experiments have been done. We checked: (i) the constitutive materials resistance to elevated temperature, (ii) the insulation of the buffer layer, (iii) the stability of the carrier density in the two-dimensional electron gas and, finally, (iv) the performance of devices after temperature cycling. We found that, both, the material properties and insulation of the buffer layers remains satisfactory up to 500 degrees C. The carrier density remains also very stable. However, we observe some material deterioration after temperature cycling which suggests that, in such non-passivated devices, the thermal drift could be due to partial deterioration of the surface layers and/or the gate Schottky contact. (C) 2008 Elsevier B.V. All rights reserved.
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Transport measurements on InAs/GaSb superlattice structures for mid-infrared photodiode
Auteur(s): Cervera C., Perez J. P., Chaghi R., Rodriguez J. B., Christol P., Konczewicz L., Contreras S.
Conference: 16th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON 16) (Montpellier (FRANCE), FR, 2009-08-24)
Actes de conférence: 16TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON 16), vol. 193 p.012030 (2009)
Ref HAL: hal-00536291_v1
Exporter : BibTex | endNote
Résumé: In this communication, we report on electrical transport measurements of non-intentionally doped InAs/GaSb Super lattice structures grown by Molecular Beam Epitaxy. Resistivity and Hall Effect measurements were performed on two samples, corresponding to the same SL structure that has been grown on two different substrates: one on semi-insulating GaAs substrate, another on n-type GaSb substrate. To carry out the electrical measurements, the conducting GaSb substrate of the second sample has been removed. The study were performed in the temperature range 77-300K, for magnetic fields of 0.38 T.. The both samples exhibited a change in type of conductivity from p-type at low temperature to n-type near room temperature.
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Ballistic effects up to room temperature in microscopic Hall sensors
Auteur(s): Jouault B., Desrat W., Couturaud O., Contreras S., Mailly Dominique, Mosser Vincent, Zawadski W.
(Article) Publié:
Journal Of Applied Physics, vol. 105 p.074504 (2009)
Ref HAL: hal-00394184_v1
DOI: 10.1063/1.3103303
WoS: 000266633500090
Exporter : BibTex | endNote
3 Citations
Résumé: The Hall resistance of small Hall sensors and its nonlinear dependence on magnetic field B were investigated at the temperature of 4.2 K. The sensors were four-terminal crosses fabricated by etching AlGaAs/InGaAs/GaAs delta-doped heterostructures. While large sensors exhibit good linearity of the Hall voltage on magnetic field, in sensors smaller than 5 mu m we detected pronounced nonlinearities for magnetic fields between 0 and 2 T. We attribute the latter to ballistic corrections to the classical Hall effect, and we model the Hall and the bend resistances at low temperature using Monte Carlo simulation. We also carried out temperature studies of the Hall sensors. We show that the nonlinearities persist up to room temperature. The effect of nonlinearities on the performance of Hall sensors is discussed.
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Electrical transport phenomena in magnesium-doped p-type GaN
Auteur(s): Konczewicz L., Litwin-Staszewska Elzbieta, Contreras S., Piotrzkowski Ryszard, Dmowski Leslaw
Conference: 13th International Conference on High Pressure Semiconductor Physics (HPSP-13) (Fortaleza (BRAZIL), FR, 2008-07-22)
Actes de conférence: PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, vol. 246 p.658-663 (2009)
Ref HAL: hal-00401355_v1
Exporter : BibTex | endNote
Résumé: In this paper we present the resistivity and Hall-effect measurements on p-type GaN doped with Mg. The experiments were carried out as a function of hydrostatic pressure Lip to 1200 MPa in the temperature range 260-400 K. Both bulk GaN crystals as well as GaN: Mg epilayers were studied. In the investigated samples the decrease of resistivity and increase of hole concentration under pressure was observed. Such a behavior, which is contrary to the n-type material strongly suggests a decrease of the ionization energy of Mg acceptor (E-a = 183 meV) with pressure. This shift is very weak, less than -2 meV/GPa. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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