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Effect of pressure on electrical properties of short period InAs/GaSb superlattice 
Auteur(s): Konczewicz L., Contreras S., Aït-Kaci H., Cuminal Y., Rodriguez Jean-Baptiste, Christol Philippe
Conference: 13th International Conference on High Pressure Semiconductor Physics (HPSP-13) (Fortaleza (BRAZIL), FR, 2008-07-22)
Actes de conférence: PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, vol. 246 p.643-647 (2009)
Ref HAL: hal-00401354_v1
Exporter : BibTex | endNote
Résumé: In this paper, we present resistivity and Hall measurements on InAs/GaSb Superlattice (SL) grown by Molecular Beam Epitaxy (MBE) on GaAs semi-insulating substrate. Measurements have been carried out under hydrostatic pressure up to 1300 MPa in the temperature range 80-300 K. We observe that the sample exhibits a reproducible change in conductivity type. The SL is n-type at high temperatures range whereas it is p-type at low temperature. The characteristic temperature T-ch at which the switch of conductivity type occurs increases with pressure from T-ch = 190 K to 280 K at highest pressure. The room temperature results are characterized by a strong increase of resistivity with pressure. The room-temperature Hall mobility varies from 1350 cm(2)/V s for ambient pressure to 345 cm(2)/V s for P = 1210 MPa. This strong effect of pressure on electrical transport properties of material suggests that at room temperature at least two types of electrons respectively with high and low mobility take part in the conduction process. The low mobility carriers could be related to the L mini band. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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Investigation of AlGaN/AlN/GaN heterostructures for magnetic sensor application from liquid helium temperature to 300 degrees C
Auteur(s): Bouguen Laure, Contreras S., Jouault B., Konczewicz L., Camassel J., Cordier Y., Azize M., Chenot S., Baron N.
(Article) Publié:
Applied Physics Letters, vol. 92 p.043504 (2008)
Ref HAL: hal-00535633_v1
DOI: 10.1063/1.2838301
WoS: 000252860400112
Exporter : BibTex | endNote
14 Citations
Résumé: We report a comparative investigation of the magnetic response of long channel AlGaN/AlN/GaN heterostructures (Hall-field effect transistor devices) grown on three different semi-insulating templates on silicon and sapphire. From Hall effect measurements conducted up to 573 K (300 degrees C), we find that some of these specific devices can be used as magnetic sensors in a large temperature range (similar to 600 degrees C) with a magnetic sensitivity close to 60 V/A T and a small thermal drift. On the best sample, between liquid helium temperature and 300 degrees C, the average value of the thermal drift is only -7 ppm/degrees C. (C) 2008 American Institute of Physics.
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Zero-thermal drift quantum Well Hall Sensor
Auteur(s): Mosser Vincent, Kerlain A., Haddab Yassine, Bouguen Laure, Jouault B., Contreras S.
Conference: Proceeding Eurosensors XXII (Dresden, DE, 2008-09)
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Pressure characterization of AlGaN/GaN Hall sensors
Auteur(s): Konczewicz L., Contreras S., Bouguen Laure, Jouault B., Camassel J., Cordier Yvon
Conference: 13th International Conference on High Pressure Semiconductor Physics (Fortaleza,, BR, 2008-07-22)
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Finite element modeling for temperature stabilization of gated Hall sensors
Auteur(s): Jouault B., Bouguen Laure, Contreras S., Kerlain A., Mosser Vincent
(Article) Publié:
Journal Of Applied Physics, vol. 104 p.053705 (2008)
Texte intégral en Openaccess : 
Ref HAL: hal-00388502_v1
DOI: 10.1063/1.2968436
WoS: 000259853600059
Exporter : BibTex | endNote
4 Citations
Résumé: Using finite element analysis, we have calculated the Hall voltage of gated Hall sensors in the temperature range (−55 °C, 125 °C). We investigated how both the sensor shape and the external connections influence the Hall voltage and its thermal drift. The numerical results are in excellent agreement with the experimental measurements. By contrast, we checked that simplified analytical methods lead to a large numerical error, which is not acceptable in these sensors devoted to metrological applications. In particular, it is found that the thermal drift in the Hall voltage can be canceled for a current of the order of 300 µA, a much higher value than that predicted by the corresponding analytical calculations.
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Evaluation of magnetic sensors based on AlGaN/GaN heterostructures: temperature dependence
Auteur(s): Bouguen Laure, Contreras S., Jouault B., Konczewicz L., Cordier Y., Azize M., Chenot S., Baron N.
Conference: Proceeding of 16th European workshop on Heterostructure Technology (Frejus, FR, 2007-09)
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Top injection and side injection to a buried 2DEG : beyond the Murrmann-Berger model
Auteur(s): Mosser Vincent, Kerlain A., Couturaud O., Chaubet C., Jouault B., Contreras S., Reverchon J.L., Cassette S.
Conference: Proceeding of 16th European workshop on Heterostructure Technology (Frejus, FR, 2007-09)
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