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(167) Production(s) de LEFEBVRE P.
Exciton dynamics in a-plane (Al,Ga)N/GaN single quantum wells grown by molecular beam epitaxy on ELO-GaN. Auteur(s): Corfdir Pierre, Lefebvre P., Dussaigne Amélie, Balet Laurent, Sonderegger Samuel, Zhu T., Martin Denis, Ganière Jean-Daniel, Grandjean N., Deveaud-Plédran Benoit
Conference: International Workshop on Nitride Semiconductors - IWN 2010 (Tampa, Floride., US, 2010-09-19) |
Time-resolved cathodoluminescence on polychromatic light emitting (In,Ga)N quantum wells grown on (11-22) GaN facets. Auteur(s): Corfdir Pierre, Simeonov Dobri, Feltin E., Carlin J.F., Lefebvre P., Grandjean N., Deveaud-Plédran Benoit, Ganière Jean-Daniel (Affiches/Poster) (10th Int. Workshop on Beam Injection Assessment of Microstructures in Semicond - BIAMS 2010jul. 2010 (Halle, DE), 2011 |
Radiative defects in GaN nanocolumns: Correlation with growth conditions and sample morphology. Auteur(s): Lefebvre P., Fernandez-Garrido S., Grandal J., Ristic J., Sanchez-Garcia M.A., Calleja E. (Article) Publié: Applied Physics Letters, vol. 98 p.083104 (2011) |
Exciton dynamics involving basal stacking faults in a-plane GaN studied by low-temperature time-resolved cathodoluminescence. Auteur(s): Corfdir P., Ristic J., Lefebvre P., Dussaigne Amélie, Martin D., Ganière Jean-Daniel, Grandjean N., Deveaud-Plédran Benoit (Article) Publié: Applied Physics Letters, vol. 94 p.201115 (2009) Texte intégral en Openaccess : |
Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy Auteur(s): Corfdir P., Lefebvre P., Levrat J., Dussaigne Amélie, Ganière Jean-Daniel, Martin D., Ristic J., Zhu T., Grandjean N., Deveaud-Plédran Benoit (Article) Publié: Journal Of Applied Physics, vol. 105 p.043102 (2009) Texte intégral en Openaccess : |
Time-resolved spectroscopy on GaN nanocolumns grown by plasma assisted molecular beam epitaxy on Si substrates Auteur(s): Corfdir P., Lefebvre P., Ristic J., Valvin P., Calleja E., Trampert A., Ganière Jean-Daniel, Deveaud-Plédran Benoit (Article) Publié: Journal Of Applied Physics, vol. 105 p.013113 (2009) Texte intégral en Openaccess : |
Picosecond time-resolved cathodoluminescence to study GaN based materials Auteur(s): Sonderegger Samuel, Corfdir Pierre, Balet Laurent, Ristic J., Lefebvre P., Ganière Jean-Daniel, Deveaud-Plédran Benoit
Conference: 2nd GCOE International Symposium on Photonics and Electronics Science and Engineering (Kyoto, JP, 2009-03-13) |