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(167) Production(s) de LEFEBVRE P.
Cavités photoniques à boîtes quantiques GaN pour l’Ultra-Violet Auteur(s): Brimont C., Guillet T., Mexis M., Bretagnon T., Lefebvre P., Gil B.
Conference: 13èmes Journées de la Matière Condensée (Montpellier, FR, 2012-08-29) |
Importance of excitonic effects and the question of internal electric fields in stacking faults and crystal phase quantum discs: the model-case of GaN. Auteur(s): Corfdir Pierre, Lefebvre P. (Article) Publié: Journal Of Applied Physics, vol. 112 p.053512 (2012) Texte intégral en Openaccess : |
Optical Properties and Characterization of High-Al Content
III-Nitride Alloys. Physical and Experimental Issues. Auteur(s): Lefebvre P.
Conférence invité: International Workshop: Intensive Discussion on Crystal Growth of Nitride Semiconductors. (Sendai, JP, 2012-10-21) |
E-beam nanopatterning for the ordered growth of GaN/InGaN nanorods. Auteur(s): Barbagini Francesca, Bengoechea-Encabo Ana, Albert Steven, Lefebvre P., Martinez Javier, Sanchez-Garcia M.A., Calleja E.
Conference: 37th International Conference on Micro and Nano Engineering (MNE 2011). (Berlin, DE, 2011-09-19) |
Analysis and control of emission properties of InGaN-on-GaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates. Auteur(s): Lefebvre P.
Conférence invité: SPIE-Photonic West-OPTO. "Gallium Nitride Materials and Devices VII". (Conference 8262). (San Francisco, US, 2012-01-21) |
Role of the dielectric mismatch on the emission properties of GaN nanostructures. Auteur(s): Corfdir Pierre, Lefebvre P. (Affiches/Poster) International Workshop on Nitride semiconductors (IWN 2012). (Sapporo, JP), 2012-10-14 |
Purely radiative exciton recombination in (Al,Ga)N/GaN quantum wells grown on the a-facet of GaN crystals. Auteur(s): Corfdir Pierre, Dussaigne Amélie, Teisseyre H., Suski Tadeusz, Grzegory Izabella, Lefebvre P., Giraud E., Ganière Jean-Daniel, Grandjean N., Deveaud-Plédran Benoit
Conference: International Workshop on Nitride semiconductors (IWN 2012). (Sapporo, JP, 2012-10-14) |