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(322) Production(s) de GIL B.
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Critical layer thickness in MOCVD grown InGaAs-GaAs strained quantum wells 
Auteur(s): Zhang Xb, Briot O., Gil B., Aulombard R.
Conference: 1st International Conference on Low Dimensional Structures and Devices (Singapore, SG, 1995)
Actes de conférence: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, vol. 35 p.184 (1995)
Ref HAL: hal-00547105_v1
Exporter : BibTex | endNote
Résumé: A series of In0.14Ga0.86As-GaAs quantum well structures have been grown by metal organic chemical vapor deposition (MOCVD). The measured dependence of photoluminescence (PL) energies on well width is compared with calculation. By the energy shift, line width and intensity change of PL spectroscopy, critical layer thickness has been identified. The critical layer thickness obtained for MOCVD grown material was found in agreement with theoretical value, but is smaller than molecular beam epitaxy grown ones.
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Exciton recombination mechanism and binding energies in MOCVD-grown Zn1-xCdxSe-ZnSe single quantum wells.
Auteur(s): Liaci F., Aigouy L., Bigenwald P., Gil B., Briot N., Cloitre T., Briot O., Aulombard R.
Conference: IV International Conference on Optics of Excitons in Confined Systems (Cortona, IT, 1995)
Actes de conférence: NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, vol. 17 p.1585 (1995)
Ref HAL: hal-00547074_v1
Exporter : BibTex | endNote
Résumé: We report here on the study of the optical properties of ZnCdSe-ZnSe quantum structures elaborated by metalorganic chemical vapour deposition (MOCVD). The band structure is experimentally investigated by means of photoluminescence and photoreflectance. We have computed the exciton binding energies for heavy- and light-hole excitons in the context of a self-consistent two-parameter trial function. As a complement, we study the temperature dependence of the photoluminescence intensity under both direct and indirect photoexcitation in graded-index separate confinement heterostructures based on these materials.
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Valence-band physics and the optical properties of GaN epilayers grown onto sapphire with wurtzite symmetry
Auteur(s): Gil B., Briot O., Aulombard R.
(Article) Publié:
Physical Review B, vol. 52 p.17028 (1995)
Ref HAL: hal-00547098_v1
Exporter : BibTex | endNote
Résumé: We report on a quantitative analysis of the band gap of hexagonal GaN epilayers in terms of the joint contributions;of the actual wurtzite symmetry on the one hand and of residual strain fields on the other hand. This investigation leads to revision of the previous modelings based on quasicubic descriptions of the valence-band physics and gives Delta(1)=10+/-0.1 meV, Delta(2)=6.2+/-0.1 meV, and Delta(3)=5.5+/-0.1 meV. Last we propose a set of deformation potentials for the hexagonal GaN semiconductor.
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About the utilization of hydrostatic pressure and uniaxial stress in the physics of semiconductors
Auteur(s): Leroux M, Gil B.
Conference: Symposium on the Claude Benoit a la Guillaume - Radioactive Effects in Semiconductors (PARIS (FRANCE), FR, 1995-04-06)
Actes de conférence: ANNALES DE PHYSIQUE, vol. 20 p.109-117 (1995)
Résumé: We review the influence of hydrostatic pressure and uniaxial stress on the electronic structure of bulk semiconductors, bound excitons and semiconductor heterostructures. We illustrate the potentialities of such perturbations to give symmetries of quantum states as well as band offsets in heterostructures.
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OBSERVATION OF FABRY-PEROT MODES IN THE UPPER BRANCH OF THE POLARITON IN ZNSE-GAAS EPILAYERS
Auteur(s): Boemare C, Gil B., Assuncao M, Sollner J, Taudt W, Heuken M, Nazare Mh
(Autres publications)
, 1995 |
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UPPER-CONDUCTION-BAND EFFECTS IN HEAVILY STRAINED LOW-DIMENSIONAL ZINCBLENDE SEMICONDUCTOR SYSTEMS - REPLY
Auteur(s): Jancu Jm, Bertho D, Jouanin C, Gil B.
(Article) Publié:
Physical Review B, vol. 51 p.7929-7930 (1995)
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EXCITONIC PROPERTIES AND RESONANCE WIDTHS IN BIASED (GA,IN)AS-GAAS DOUBLE-QUANTUM WELLS
Auteur(s): Bigenwald P, Gil B.
(Article) Publié:
Physical Review B, vol. 51 p.9780-9785 (1995)
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